| PART |
Description |
Maker |
| APT10M11JVR |
POWER MOS V 100V 144A 0.011 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT30M30B2LL APT30M30LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 100A 0.030 Ohm
|
Advanced Power Technology Ltd.
|
| APT10M11JVFR |
Power FREDFET; Package: ISOTOP®; ID (A): 144; RDS(on) (Ohms): 0.011; BVDSS (V): 100; 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| APT10M07JVR APT10M07 |
POWER MOS V 100V 225A 0.007 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| HUF76132S3S HUF76132P3 FN4553 76132P |
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
75A 30V 0.011 Ohm N-Channel Logic Level UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IN3296AR IN3291AR IN3291A AR-IN3291A IN3292AR IN32 |
General Purpose Rectifier
500V, 100A general purpose single diode
100V, 100A general purpose single diode
1200V, 100A general purpose single diode
ER 2C 2#4 PIN RECP LINE
ER 2C 2#0 SKT RECP
ER 25C 25#12 PIN RECP LINE
Circular Connector; No. of Contacts:12; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:32; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:32-6 RoHS Compliant: No
AB 3C 3#4 SKT PLUG LINE
600V, 100A general purpose single diode
300V, 100A general purpose single diode
800V, 100A general purpose single diode
|
POWEREX[Powerex Power Semiconductors]
Powerex Power Semicondu...
|
| APT20M20B2FLL APT20M20LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 100A 0.020 Ohm
|
Advanced Power Technology Ltd.
|
| IRF530 IRF532FI IRF531FI IRF533FI IRF531 IRF530FI |
N-channel MOSFET, 80V, 9A
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STD9N10L 6165 |
N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
